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Optimised switching of a SiC MOSFET in a VSI using the body diode and additional Schottky barrier diode

Title data

Horff, Roman ; März, Andreas ; Lechler, M. ; Bakran, Mark-M.:
Optimised switching of a SiC MOSFET in a VSI using the body diode and additional Schottky barrier diode.
2015
Event: EPE'15 ECCE-Europe, 17th European Conference on Power Electronics and Applications, 2015 , 08.-10. Sept. 2015 , Genf, Schweiz.
(Conference item: Conference , Paper )

Abstract in another language

In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET. The switching losses of these three combinations are analysed to find the best combination of MOSFET and antiparallel diode for the application in a voltage source inverter (VSI). The body diode was found to dissipate not negligible switching losses. The effect of a silicon carbide Schottky barrier diode in high current SiC power modules is shown. Calculating the power capability, it is shown that the MOSFET inverter without SBD has the higher power density.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 16 Dec 2015 08:23
Last Modified: 16 Dec 2015 08:23
URI: https://eref.uni-bayreuth.de/id/eprint/28978