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A Performance Comparison of a 650 V Si IGBT and SiC MOSFET Inverter under Automotive Conditions

Title data

Bertelshofer, Teresa ; Horff, Roman ; März, Andreas ; Bakran, Mark-M.:
A Performance Comparison of a 650 V Si IGBT and SiC MOSFET Inverter under Automotive Conditions.
2016
Event: PCIM Europe 2016 , 10.-12.05.2016 , Nürnberg.
(Conference item: Conference , Speech )

Abstract in another language

This paper researches the performance benefits of replacing the Si IGBTs and Si PIN-diodes of a 650 V/ 100 kW 3-phase power module for automotive drives with SiC MOSFETs. For this purpose the maximum current density of the devices and their losses during a load cycle are evaluated. It will be shown, how much the chip area and the power losses, especially under partial load, can be reduced by substituting the Si power semiconductors with the SiC MOSFETs.

Further data

Item Type: Conference item (Speech)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 19 May 2016 10:03
Last Modified: 23 Nov 2018 08:04
URI: https://eref.uni-bayreuth.de/id/eprint/32402