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Failure Characteristics of Discrete Power Semiconductor Packages Exceeding Electrical Specifications

Title data

Gleißner, Michael ; Bakran, Mark-M.:
Failure Characteristics of Discrete Power Semiconductor Packages Exceeding Electrical Specifications.
In: EPE'14 ECCE Europe. - s.l. : IEEE , 2014
ISBN 978-1-4799-3014-2

Official URL: Volltext

Abstract in another language

The failure characteristics of power semiconductors determine necessary protection elements and fault-tolerance of the total system. To obtain information on failure characteristics, several low voltage power MOSFETs with different packages, manufacturers and voltage ratings are deliberately destroyed by exceeding the electrical parameters gate- and drain-source voltage. Furthermore, the stability of MOSFETs during a capacitor discharging depending on the amount of stored energy is investigated, which is necessary for successful level reduction in multilevel converters. The research focuses on the device behaviour after failure depending on the package technology to give a design hint for fault-tolerant applications.

Further data

Item Type: Article in a book
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Profile Fields
Profile Fields > Emerging Fields
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 18 Nov 2014 08:33
Last Modified: 22 Apr 2015 07:36
URI: https://eref.uni-bayreuth.de/id/eprint/3338