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Entwicklung eines Simulationsmodells in PLECS zur Analyse des Schaltverhaltens von Siliziumkarbid MOSFETs

Title data

Bormann, Patrick:
Entwicklung eines Simulationsmodells in PLECS zur Analyse des Schaltverhaltens von Siliziumkarbid MOSFETs.
2017
(Master's, 2017, Universität Bayreuth, Fakultät für Ingenieurwissenschaften, Lehrstuhl für Mechatronik)

Further data

Item Type: Master's, Magister, Diploma, or Admission thesis (Master's)
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics
Faculties
Faculties > Faculty of Engineering Science
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 01 Aug 2017 13:14
Last Modified: 01 Aug 2017 13:14
URI: https://eref.uni-bayreuth.de/id/eprint/39019