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Suitable Turn-Off Strategies for IGBTs with High Desaturation Current During Short Circuit Failures Detected with the 2D-Short Circuit Detection Method

Titelangaben

Hain, Stefan ; Bakran, Mark-M.:
Suitable Turn-Off Strategies for IGBTs with High Desaturation Current During Short Circuit Failures Detected with the 2D-Short Circuit Detection Method.
2017
Veranstaltung: PCIM Europe 2017 , 16.-18.05.2017 , Nürnberg, Deutschland.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung , Paper )

Abstract

The 2D-short circuit detection method is one of the fastest fault detection methods for power semicon-ductors. It is able to detect a short circuit failure even before the collector current reaches its desaturaion limit. But a fast fault detection is just one part of a reliable short circuit protection. It has to be combined with a fast reacting and sutiable turn-off strategy in order to provide a working short circuit protection. Therefore, this paper presents the suitability of different turn-off strategies for short circuit events for IGBTs with a high desturation current, detected with the 2D-short circuit detection method.

Weitere Angaben

Publikationsform: Veranstaltungsbeitrag (Paper)
Begutachteter Beitrag: Ja
Institutionen der Universität: Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik
Fakultäten
Fakultäten > Fakultät für Ingenieurwissenschaften
Titel an der UBT entstanden: Ja
Themengebiete aus DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Eingestellt am: 26 Sep 2017 06:15
Letzte Änderung: 26 Sep 2017 06:15
URI: https://eref.uni-bayreuth.de/id/eprint/39745