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Comparison of the Surge Current Ruggedness between the Body Diode of SiC MOSFETs and Si Diodes for IGBT

Title data

Hofstetter, Patrick ; Bakran, Mark-M.:
Comparison of the Surge Current Ruggedness between the Body Diode of SiC MOSFETs and Si Diodes for IGBT.
2018
Event: CIPS 2018 , 20.03.-22.03.2018 , Stuttgart.
(Conference item: Conference , Paper )

Abstract in another language

The aim of this paper is to derive a statement, whether body diodes of future SiC MOSFETs will achieve similar I2t values
as freewheeling diodes currently used in IGBT modules. In the first part, a short experimental study will be shown, where two 1200V SiC MOSFETs of different manufacturers are surge current tested under different conditions, like different surge current durations, temperatures, Vgs voltages and multiple stresses. The second part deals with the scaling of the measurements to the surge current capability of typical IGBT modules for traction converters.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Nov 2018 08:19
Last Modified: 13 Nov 2018 08:19
URI: https://eref.uni-bayreuth.de/id/eprint/46295