Titlebar

Export bibliographic data
Literature by the same author
plus on the publication server
plus at Google Scholar

 

Surge Current Simulation in a Half Bridge using a Thermal Model

Title data

Hohmann, Fabian ; Bakran, Mark-M.:
Surge Current Simulation in a Half Bridge using a Thermal Model.
2018
Event: EPE 2018 : 20th European Conference on Power Electronics an Applications , 17.09.-21.09.2018 , Riga, Lettland.
(Conference item: Conference , Paper )

Official URL: Volltext

Abstract in another language

In this paper an IGBT half bridge with an antiparallel press-pack diode is examined for MMC use. Stateof-
the-art half bridges use a bypass thyristor in order to protect the lower diode during a DC-short. This
paper investigates prediction methods to calculate the stress of diode 2. Furthermore, it deals with the
possibility to substitute the bypass thyristor with a press-pack diode (PP-diode) to enhance to use of the
equipped semiconductor area.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Nov 2018 08:34
Last Modified: 13 Nov 2018 08:34
URI: https://eref.uni-bayreuth.de/id/eprint/46298