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Applying the 2D-Short Circuit Detection Method to SiC MOSFETs including an advanced Soft Turn Off

Title data

Hofstetter, Patrick ; Hain, Stefan ; Bakran, Mark-M.:
Applying the 2D-Short Circuit Detection Method to SiC MOSFETs including an advanced Soft Turn Off.
2018
Event: PCIM Europe 2018 , 05.06.-07.06.2018 , Nürnberg, Deutschland.
(Conference item: Conference , Paper )

Abstract in another language

To address the problem of small short circuit withstand
times of SiC MOSFETs, this paper presents a
short circuit protection, which detects the fault close
to the earliest time possible and turns off the device
safely. For the detection, the 2D-short circuit detection
method [1, 2] was adapted to SiC MOSFETs.
As SiC MOSFETs have to be turned off softly, a
turn-off strategy is shown which is able to turn the
device off during a short circuit type 1 and a short
circuit type 2 in an optimized way.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Nov 2018 09:58
Last Modified: 13 Nov 2018 09:58
URI: https://eref.uni-bayreuth.de/id/eprint/46307