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Challenging the 2D-Short Circuit Detection Method for SiC MOSFETs

Title data

Hofstetter, Patrick ; Bakran, Mark-M.:
Challenging the 2D-Short Circuit Detection Method for SiC MOSFETs.
Event: PCIM Europe 2019 , 07.05.-09.05.2019 , Nürnberg.
(Conference item: Conference , Paper )

Abstract in another language

After proving the potential of the 2D-short circuit detection method for SiC MOSFETs in the preceding work [1], this paper aims to test worst case application conditions and to further develop the protection system. Besides investigations on temperature influences and low inductive setups, it is shown how to cope with oscillations on the drain current with different circuit extensions. These may even occur during conductive state, due to the switching of adjacent phases.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Jun 2019 07:38
Last Modified: 13 Jun 2019 07:38
URI: https://eref.uni-bayreuth.de/id/eprint/49489