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Expansion of the Junction Temperature Measurement via the Internal Gate Resistance to a wide range of Power Semiconductors

Title data

Kestler, Tobias ; Bakran, Mark-M.:
Expansion of the Junction Temperature Measurement via the Internal Gate Resistance to a wide range of Power Semiconductors.
2019
Event: 21th European Conference on Power Electronics and Applications , 02.09.-06.09.2019 , Genua.
(Conference item: Conference , Paper )

Abstract in another language

The temperature dependent internal gate resistance Rgi of MOS devices is suitable for online Tj acquisition in operating application circuits. Recent publications have shown various measurement approaches and tested them for specific DUTs. In this work the issues arising when applying the Rgi-method to DUTs with a low Rgi and to SiC MOSFETs are described. If a device exhibits a low Rgi the measurement error due to parasitic resistance becomes relevant. For SiC MOSFETs frequency dependent effects, which can presumably be attributed to charge trapping at the gate oxide, have a significant influence on the measured data.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 30 Sep 2019 09:54
Last Modified: 30 Sep 2019 09:54
URI: https://eref.uni-bayreuth.de/id/eprint/52497