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36% Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

Title data

Rimmelspacher, Johannes ; Weigel, Robert ; Hagelauer, Amelie ; Issakov, Vadim:
36% Frequency-Tuning-Range Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology.
In: 2017 IEEE MTT-S International Microwave Symposium (IMS). - Honolulu, Hawaii, USA , 2017 . - pp. 1356-1358
ISBN 9781509063604
DOI: https://doi.org/10.1109/MWSYM.2017.8058865

Abstract in another language

This paper presents a millimeter-wave (mm-wave) push-push voltage-controlled oscillator (VCO) in a 45 nm RFSOI CMOS technology. The circuit aims to meet specifications for FMCW radar applications requiring an ultra-wide PLL modulation bandwidth. The fundamental output of the VCO can be tuned from 27 GHz to 39 GHz, which corresponds to frequency tuning range (FTR) of 36 . We extract the 2nd harmonic in a non-invasive way using a transformer. The measured phase noise (PN) at 1 MHz offset from the fundamental carrier varies across the tuning range from -100 dBc/Hz to -90 dBc/Hz. The VCO including output buffers dissipates 65 mW DC power from a single 1 V supply and consumes a chip area of 0.12 mm2.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: millimeter-wave; ultra-wideband; CMOS technology; cutoff frequency; System-on-Chip; Silicon-on-Insulator
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 18 Oct 2019 07:25
Last Modified: 18 Oct 2019 07:25
URI: https://eref.uni-bayreuth.de/id/eprint/52526