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Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz

Title data

Issakov, Vadim ; Rimmelspacher, Johannes ; Werthof, Andreas ; Hagelauer, Amelie ; Weigel, Robert:
Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz.
In: 2017 IEEE MTT-S International Microwave Symposium. - Honolulu, USA , 2017 . - pp. 1-3
ISBN 9781509063604
DOI: https://doi.org/10.1109/MWSYM.2017.8058792

Abstract in another language

Interferences injected to an RF circuit may strongly deteriorate the electrical performance. Parasitic coupling via substrate is one of the dominant interference transmission mechanisms in highly integrated systems. The effect of substrate coupling becomes more critical at higher circuit frequencies. This poses a particular challenge for highly integrated millimeterwave systems, since isolation techniques become less efficient with an increasing operating frequency. This paper presents an experimental study on coupling via bulk silicon and RFSOI substrates. We investigate in measurement up to 110 GHz efficiency of several isolation techniques, such as triple-well, p+ and n+ guard-rings and use of undoped highly resistive region. Additionally, RF-SOI substrates are known to be beneficial for higher crosstalk isolation. However, also this isolation degrades at higher frequencies. Hence, we investigate in measurement up to 110 GHz the isolation via low-resistivity and high-resistivity trap-rich SOI substrate variants. Test structures were realized in 40 nm bulk CMOS and 45 nm RF-SOI technology nodes.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: millimeter-wave; Substrate-coupling effects; CMOS; Silicon-on-Insulator
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 21 Oct 2019 09:14
Last Modified: 21 Oct 2019 09:14
URI: https://eref.uni-bayreuth.de/id/eprint/52536