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Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz

Titelangaben

Issakov, Vadim ; Rimmelspacher, Johannes ; Werthof, Andreas ; Hagelauer, Amelie ; Weigel, Robert:
Experimental Study on Substrate Coupling in Bulk Silicon and RF-SOI CMOS up to 110 GHz.
In: 2017 IEEE MTT-S International Microwave Symposium. - Honolulu, USA , 2017 . - S. 1-3
ISBN 9781509063604
DOI: https://doi.org/10.1109/MWSYM.2017.8058792

Abstract

Interferences injected to an RF circuit may strongly deteriorate the electrical performance. Parasitic coupling via substrate is one of the dominant interference transmission mechanisms in highly integrated systems. The effect of substrate coupling becomes more critical at higher circuit frequencies. This poses a particular challenge for highly integrated millimeterwave systems, since isolation techniques become less efficient with an increasing operating frequency. This paper presents an experimental study on coupling via bulk silicon and RFSOI substrates. We investigate in measurement up to 110 GHz efficiency of several isolation techniques, such as triple-well, p+ and n+ guard-rings and use of undoped highly resistive region. Additionally, RF-SOI substrates are known to be beneficial for higher crosstalk isolation. However, also this isolation degrades at higher frequencies. Hence, we investigate in measurement up to 110 GHz the isolation via low-resistivity and high-resistivity trap-rich SOI substrate variants. Test structures were realized in 40 nm bulk CMOS and 45 nm RF-SOI technology nodes.

Weitere Angaben

Publikationsform: Aufsatz in einem Buch
Begutachteter Beitrag: Ja
Keywords: millimeter-wave; Substrate-coupling effects; CMOS; Silicon-on-Insulator
Institutionen der Universität: Fakultäten > Fakultät für Ingenieurwissenschaften > Ehemalige Professoren > Lehrstuhl Kommunikationselektronik - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer
Fakultäten
Fakultäten > Fakultät für Ingenieurwissenschaften
Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Kommunikationselektronik
Fakultäten > Fakultät für Ingenieurwissenschaften > Ehemalige Professoren
Titel an der UBT entstanden: Nein
Themengebiete aus DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Eingestellt am: 21 Okt 2019 09:14
Letzte Änderung: 21 Okt 2019 09:14
URI: https://eref.uni-bayreuth.de/id/eprint/52536