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A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology

Title data

Völkel, Matthias ; Schrotz, Albert-Marcel ; Weigel, Robert ; Hagelauer, Amelie:
A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology.
In: 2019 IEEE Radio and Wireless Symposium (RWS). - Piscataway, NJ : IEEE , 2019 . - pp. 341-343
ISBN 978-1-5386-5944-1
DOI: https://doi.org/10.1109/RWS.2019.8714496

Abstract in another language

In this paper a 60 GHz monolithic transmitter for high precision based industrial radar systems is presented. The integrated transmitter has been designed using a 0.13 μm SiGe BiCMOS process from IHP (SG13G2) and includes multiplier, multiplexer, power amplifier and a digital interface. For testing, a PCB interface adapter is developed to control and supply the chip directly on the wafer prober. The integrated transmitter circuit has a size of 1800 μm x 1600 μm and a maximum power consumption of 148.5 mW from a 3.3 V power supply. The circuit provides four frequency inputs and multiplies them up to 60 GHz. The chip delivers a output power of 8 dBm at 60 GHz and min. 5 dBm over a frequency range from 55 to 65 GHz. The input path is switched and the output power is adjustable by a digital interface between -20 and 8 dBm at 60 GHz. This serial interface is realized in 0.13 μm CMOS logic and consists of a 15 bit shift register, decoder and and analog interface.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: industrial radar; transmitter; millimeter wave circuits; SiGe BiCMOS
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 16 Oct 2019 12:01
Last Modified: 16 Oct 2019 12:01
URI: https://eref.uni-bayreuth.de/id/eprint/52696