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Mitigating Drain Source Voltage Oscillation for SiC Power MOSFETs in order to reduce Electromagnetic Interference

Title data

Hofstetter, Patrick ; Bakran, Mark-M.:
Mitigating Drain Source Voltage Oscillation for SiC Power MOSFETs in order to reduce Electromagnetic Interference.
2019
Event: 21th European Conference on Power Electronics and Applications , 02.09.-06.09.2019 , Genua, Italien.
(Conference item: Conference , Paper )

Abstract in another language

In this paper various approaches are shown to mitigate drain source voltage oscillation at SiC MOSFET turn-off. At first, a MOSFET behavior model is presented and confirmed with measurement results.
Based on this model, the suitability of oscillation mitigation methods is evaluated regarding effect, timing requirement and switching losses.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 11 Feb 2020 07:51
Last Modified: 11 Feb 2020 07:51
URI: https://eref.uni-bayreuth.de/id/eprint/54317