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Comparison of IGBT and SiC MOSFET in resonant application

Title data

März, Andreas ; Bertelshofer, Teresa ; Helsper, Martin ; Bakran, Mark-M.:
Comparison of IGBT and SiC MOSFET in resonant application.
Event: 20th European Conference on Power Electronics and Applications , 17-21 September 2018 , Riga, Lettland.
(Conference item: Conference , Paper )

Abstract in another language

In this paper the main advantages of SiC MOSFETs compared to IGBTs in soft-switching converters are discussed. Experimental results show the difference in conduction losses between MOSFETs and IGBTs as well as switching losses under ZVC and ZCS condition on the basis of a high efficient DCDC-converter design.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 11 Feb 2020 07:56
Last Modified: 11 Feb 2020 07:56
URI: https://eref.uni-bayreuth.de/id/eprint/54320