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The Benefit of Using an IGBT with a High Desaturation Current

Title data

Hain, Stefan ; Bakran, Mark-M.:
The Benefit of Using an IGBT with a High Desaturation Current.
2017
Event: 19th European Conference on Power Electronics and Applications , 11-14 September 2017 , Warschau, Polen.
(Conference item: Conference , Paper )

Abstract in another language

Increasing the channel width of an IGBT is an obvious way to lower the Vce;sat value without any influences on the switching losses of the device. Consequently, the achievable benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness.
This paper presents the benefits of an IGBT which could be realized, if the feature of a low desaturation current is abandoned and the channel width is increased to a maximum.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 13 Feb 2020 06:25
Last Modified: 13 Feb 2020 06:25
URI: https://eref.uni-bayreuth.de/id/eprint/54334