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Impact Of High Sc Content On Crystal Morphology And RF Performance Of Sputtered Al1-xScxN SMR BAW

Title data

Bogner, Andreas ; Timme, Hans-Jörg ; Bauder, Rüdiger ; Mutzbauer, Angelika ; Pichler, Diana ; Krenzer, Michael ; Reccius, Christian ; Weigel, Robert ; Hagelauer, Amélie:
Impact Of High Sc Content On Crystal Morphology And RF Performance Of Sputtered Al1-xScxN SMR BAW.
In: IEEE (ed.): 2019 IEEE International Ultrasonics Symposium (IUS). - Piscataway, NJ , 2019 . - pp. 706-709
ISBN 978-1-7281-4596-9
DOI: https://doi.org/10.1109/ULTSYM.2019.8925777

Official URL: Volltext

Abstract in another language

Applications using BAW devices benefit from large intrinsic electromechanical coupling materials, e.g. Al 1-x Sc x N. This work reports BAW-SMRs using high piezoelectric Al 1-x Sc x N and investigates the relations between Sc content, crystal morphology and resonator RF performance. Finally, key requirements for high quality Al 1-x Sc x N thin-film growth are analyzed and discussed examplary for x = 20at.-%.

Further data

Item Type: Article in a book
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Communication Electronics > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Communication Electronics
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 19 Nov 2020 08:59
Last Modified: 19 Nov 2020 11:04
URI: https://eref.uni-bayreuth.de/id/eprint/57365