Literatur vom gleichen Autor/der gleichen Autor*in
plus bei Google Scholar

Bibliografische Daten exportieren
 

A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells

Titelangaben

Pechmann, Stefan ; Mai, Timo ; Völkel, Matthias ; Mahadevaiah, Mamathamba K. ; Perez, Eduardo ; Perez-Bosch Quesada, Emilio ; Reichenbach, Marc ; Wenger, Christian ; Hagelauer, Amelie:
A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells.
In: Electronics. Bd. 10 (2021) Heft 5 . - 530.
ISSN 2079-9292
DOI: https://doi.org/10.3390/electronics10050530

Volltext

Link zum Volltext (externe URL): Volltext

Angaben zu Projekten

Projekttitel:
Offizieller Projekttitel
Projekt-ID
Open Access Publizieren
Ohne Angabe

Abstract

In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often spread over a wide range of electrical properties, the proposed circuit focuses on versatility in order to be adaptable to different cell properties. The circuit is suitable for both read and programming operations based on voltage pulses of flexible length and height. The implemented read method is based on evaluating the voltage drop over a measurement resistor and can distinguish up to eight different states, which are coded in binary, thereby realizing a digitization of the analog memory value. The circuit was fabricated in the 130 nm CMOS process line of IHP. The simulations were done using a physics-based, multi-level RRAM model. The measurement results prove the functionality of the read circuit and the programming system and demonstrate that the read system can distinguish up to eight different states with an overall resistance ratio of 7.9.

Weitere Angaben

Publikationsform: Artikel in einer Zeitschrift
Begutachteter Beitrag: Ja
Keywords: analog circuit; memory programming; programming circuit; read circuit; resistive memory; RRAM; voltage pulse
Institutionen der Universität: Fakultäten > Fakultät für Ingenieurwissenschaften > Ehemalige ProfessorInnen > Lehrstuhl Kommunikationselektronik - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer
Fakultäten
Fakultäten > Fakultät für Ingenieurwissenschaften
Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Kommunikationselektronik
Fakultäten > Fakultät für Ingenieurwissenschaften > Ehemalige ProfessorInnen
Titel an der UBT entstanden: Ja
Themengebiete aus DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Eingestellt am: 08 Apr 2021 07:15
Letzte Änderung: 12 Okt 2023 08:58
URI: https://eref.uni-bayreuth.de/id/eprint/64616