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Challenges of paralleling 3.3 kV SiC MOSFET modules in HVDC converter submodules

Title data

Bergmann, Lukas ; Wahle, Marcus ; Bakran, Mark-M.:
Challenges of paralleling 3.3 kV SiC MOSFET modules in HVDC converter submodules.
Event: PCIM Europe 2022 , 10.05.-12.05.2022 , Nürnberg.
(Conference item: Conference , Paper )

Abstract in another language

This work presents the challenges of paralleling 3300 V Silicon carbide MOSFET power modules. Based on a static device characterization, the static current derating depending on conduction variation and parallel number of modules is calculated. Furthermore, an investigation on dynamic imbalance of switching losses due to device parameter variation is realized based on a parametrized simulation model. Finally, a comparison of three different approaches of external module gate loop designs is presented to find the best solution.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 29 Jul 2022 06:51
Last Modified: 29 Jul 2022 06:54
URI: https://eref.uni-bayreuth.de/id/eprint/71261