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Special Effects of Junction Temperature Measurement based on the Internal Gate Resistance

Title data

Gleißner, Michael ; Bakran, Mark-M.:
Special Effects of Junction Temperature Measurement based on the Internal Gate Resistance.
2022
Event: PCIM Europe 2022 , 10.05.-12.05.2022 , Nürnberg.
(Conference item: Conference , Paper )
DOI: https://doi.org/10.30420/565822060

Abstract in another language

This paper discusses two problems and possible solutions for measuring the junction temperature of semiconductor switches using the internal gate resistor as temperature sensitive electric parameter. On the one hand, the dependency of the gate impedance on the blocking voltage and the negative gate voltage is analyzed, which can influence the temperature measurement. On the other hand, neighboring switching phases in converter operation can cause faulty temperature measurement values due to EMI coupling in the measuring circuit. An elimination method for both effects is presented.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 29 Jul 2022 08:06
Last Modified: 29 Jul 2022 08:06
URI: https://eref.uni-bayreuth.de/id/eprint/71262