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Hardware Development of an Active Gate Driver to Mitigate Oscillations of SiC MOSFET Switching Process

Title data

Walter, Michael ; Bakran, Mark-M. ; Maier, Robert ; Zheming, Li:
Hardware Development of an Active Gate Driver to Mitigate Oscillations of SiC MOSFET Switching Process.
2022
Event: PCIM Europe 2022 , 10.05.-12.05.2022 , Nürnberg.
(Conference item: Conference , Paper )
DOI: https://doi.org/10.30420/565822221

Abstract in another language

This paper propose a hardware design of an active gate driver to mitigate oscillations of SiC-MOSFET switching process. The switching losses can be decreased by increasing the switching speed, which inevitably also causes higher oscillations. This relation leads to a trade-off between low switching losses on the one hand and low oscillation/EMI on the other hand. This trade-off can be optimized by active gate drivers. To achieve this goal, an active gate driver is developed. It is based on a two-stage gate control with switchable gate resistances and utilizes the closed-loop control strategy to adjust the gate control parameter.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 29 Jul 2022 07:31
Last Modified: 29 Jul 2022 07:31
URI: https://eref.uni-bayreuth.de/id/eprint/71265