Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors

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Kadashchuk, Andrey ; Tong, Fei ; Janneck, Robby ; Fishchuk, Ivan I. ; Mityashin, Alexander ; Pavlica, Egon ; Köhler, Anna ; Heremans, Paul ; Rolin, Cedric ; Bratina, Gvido ; Genoe, Jan:
Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors.
In: Physical Review B. Bd. 96 (2017) Heft 12 . - 125202.
ISSN 0163-1829
DOI: https://doi.org/10.1103/PhysRevB.96.125202

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Abstract

We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.