Analysis of Reverse-Recovery Behaviour of SiC MOSFET Body-Diode - regarding Dead-Time

Titelangaben

Horff, Roman ; März, Andreas ; Bakran, Mark-M.:
Analysis of Reverse-Recovery Behaviour of SiC MOSFET Body-Diode - regarding Dead-Time.
In: PCIM Europe 2015. - Berlin : VDE Verlag , 2015
ISBN 978-3-8007-3924-0

Volltext

Link zum Volltext (externe URL):

Abstract

Operating a SiC-MOSFET in an inverter phase leg will result in using it in the reverse direction. As the parasitic pn-diode shows a non-favourable characteristic, the aim of this paper is to increase the performance by minimizing the dead-time between the opposite MOSFETs, thus trying to eliminate the bipolar diode effect. The effect on the reverse recovery and the overvoltage was investigated depending on current and temperature. A dead-time providing minimum losses could be identified.