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Requirements to change from IGBT to Full SiC modules in an on-board railway power supply

Title data

März, Andreas ; Horff, Roman ; Helsper, Martin ; Bakran, Mark-M.:
Requirements to change from IGBT to Full SiC modules in an on-board railway power supply.
2015
Event: EPE'2015 ECCE, 17th European Conference on Power Electronics and Applications , 08.-10.09.2015 , Genf, Schweiz.
(Conference item: Conference , Poster )

Official URL: Volltext

Abstract in another language

In this paper the difference in switching characteristic and switching losses together with the effects of parasitic elements between silicon and silicon-carbide devices on the loss distribution are reviewed. A comparison between a standard silicon IGBT module and a Full SiC MOSFET module is being made on the basis of equal voltage overshoot and maximum switching speed of both devices. Potentials and limitations between the both devices are discussed for the use of Full SiC power module in on-board power supplies for railway application.

Further data

Item Type: Conference item (Poster)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Emerging Fields
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 02 Nov 2015 08:08
Last Modified: 15 Dec 2015 14:01
URI: https://eref.uni-bayreuth.de/id/eprint/21207