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A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction

Title data

Ovsyannikov, Sergey V. ; Karkin, Alexander E. ; Morozova, Natalia V. ; Shchennikov, Vladimir V. ; Bykova, Elena ; Abakumov, Artem M. ; Tsirlin, Alexander A. ; Glazyrin, Konstantin ; Dubrovinsky, Leonid:
A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction.
In: Advanced Materials. Vol. 26 (December 2014) Issue 48 . - pp. 8185-8191.
ISSN 1521-4095
DOI: https://doi.org/10.1002/adma.201403304

Official URL: Volltext

Further data

Item Type: Article in a journal
Refereed: Yes
Keywords: transition metal oxides; direct-bandgap semiconductors; electronic transport; bandgap engineering
Institutions of the University: Research Institutions > Research Centres > Bavarian Research Institute of Experimental Geochemistry and Geophysics - BGI
Research Institutions
Research Institutions > Research Centres
Result of work at the UBT: Yes
DDC Subjects: 500 Science > 550 Earth sciences, geology
Date Deposited: 19 Aug 2016 08:00
Last Modified: 19 Aug 2016 08:00
URI: https://eref.uni-bayreuth.de/id/eprint/34191