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Design Rules to Adapt the Desaturation Detection for SiC MOSFET Modules

Title data

Bertelshofer, Teresa ; März, Andreas ; Bakran, Mark-M.:
Design Rules to Adapt the Desaturation Detection for SiC MOSFET Modules.
2017
Event: PCIM Europe 2017 , 16.-18.05.2017 , Nürnberg, Deutschland.
(Conference item: Conference , Paper )

Abstract in another language

This paper presents on overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules adapting the existing desaturation detection (Uce,desat method) which is state-of-the-art for IGBTs. These adjustmentes include sparate detection paths for hard switching faults (HSF), faults under load (FUL) and overcurrents (OC). It includes preventive gate clamping and soft shut down as well. Test results show a reliable detection and shut down of overcurrents, HSF and FUL shilw not influencing the normal switching behaciour of the device.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics
Faculties
Faculties > Faculty of Engineering Science
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 26 Sep 2017 06:13
Last Modified: 26 Sep 2017 06:13
URI: https://eref.uni-bayreuth.de/id/eprint/39742