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Improving the performance of SiC trench MOSFETs under hard switching operation

Title data

März, Andreas ; Bertelshofer, Teresa ; Bakran, Mark-M.:
Improving the performance of SiC trench MOSFETs under hard switching operation.
2017
Event: 2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS) , 12.12.-15.12.2017 , Honolulu, HI, USA.
(Conference item: Conference , Paper )

Abstract in another language

In this paper the switching performance of the latest SiC trench MOSFET and the behavior of its body diode are analyzed with regard to different stray inductances and dead time. The results show potential and challenges for switching loss reduction as well as effectiveness of different driving methods.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics
Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Faculties
Faculties > Faculty of Engineering Science
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 16 Jan 2018 08:15
Last Modified: 16 Jan 2018 08:15
URI: https://eref.uni-bayreuth.de/id/eprint/41728