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A Temperature Compensated Overcurrent and Short-Circuit Detection Method for SiC MOSFET Modules

Title data

Bertelshofer, Teresa ; März, Andreas ; Bakran, Mark-M.:
A Temperature Compensated Overcurrent and Short-Circuit Detection Method for SiC MOSFET Modules.
2017
Event: EPE 2017 ECCE Europe : 19th European Conference on Power Electronics and Applications , 11.09.2017 - 14.09.2017 , Warschau, Polen.
(Conference item: Conference , Paper )

Abstract in another language

This paper presents an overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules. It adapts the existing desaturation detection (=Uce,desat method) known from IGBTs. These adjustments inculde separate detection paths for hard switching faults (HSF) and fault under load (FUL) as well as overcurrent. The necessity of a junction temperature compensation for detecting each type of fault (HSF, FUL or overcurrent = OC) is discussed.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics
Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Faculties
Faculties > Faculty of Engineering Science
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 16 Jan 2018 08:16
Last Modified: 16 Jan 2018 08:16
URI: https://eref.uni-bayreuth.de/id/eprint/41733