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Comparison of the Layered Semiconductors GaSe, GaS, and GaSe1-xSx by Raman and Photoluminescence Spectroscopy

Title data

Pérez León, Carmen ; Kador, Lothar ; Allakhverdiev, Kerim R. ; Baykara, Tarik ; Kaya, Ali A.:
Comparison of the Layered Semiconductors GaSe, GaS, and GaSe1-xSx by Raman and Photoluminescence Spectroscopy.
In: Journal of Applied Physics. Vol. 98 (2005) Issue 10 . - p. 103103.
ISSN 1089-7550
DOI: https://doi.org/10.1063/1.2135411

Further data

Item Type: Article in a journal
Refereed: Yes
Institutions of the University: Faculties
Faculties > Faculty of Mathematics, Physics und Computer Science
Faculties > Faculty of Mathematics, Physics und Computer Science > Department of Physics
Research Institutions > Research Centres > Bayreuth Institute of Macromolecular Research - BIMF
Research Institutions
Research Institutions > Research Centres
Result of work at the UBT: Yes
DDC Subjects: 500 Science
500 Science > 500 Natural sciences
500 Science > 530 Physics
Date Deposited: 27 Mar 2015 10:53
Last Modified: 27 Mar 2015 10:53
URI: https://eref.uni-bayreuth.de/id/eprint/8676