Analysis of Reverse-Recovery Behaviour of SiC MOSFET Body-Diode - regarding Dead-Time

Title data

Horff, Roman ; März, Andreas ; Bakran, Mark-M.:
Analysis of Reverse-Recovery Behaviour of SiC MOSFET Body-Diode - regarding Dead-Time.
In: PCIM Europe 2015. - Berlin : VDE Verlag , 2015
ISBN 978-3-8007-3924-0

Official URL:

Abstract in another language

Operating a SiC-MOSFET in an inverter phase leg will result in using it in the reverse direction. As the parasitic pn-diode shows a non-favourable characteristic, the aim of this paper is to increase the performance by minimizing the dead-time between the opposite MOSFETs, thus trying to eliminate the bipolar diode effect. The effect on the reverse recovery and the overvoltage was investigated depending on current and temperature. A dead-time providing minimum losses could be identified.

Further data

Item Type:	Article in a book
Refereed:	Yes
Institutions of the University:	Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Emerging Fields > Energy Research and Energy Technology Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Emerging Fields
Result of work at the UBT:	Yes
DDC Subjects:	600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited:	01 Jun 2015 12:00
Last Modified:	09 Jan 2023 12:39
URI:	https://eref.uni-bayreuth.de/id/eprint/14553