Title data
März, Andreas ; Horff, Roman ; Helsper, Martin ; Bakran, Mark-M.:
Requirements to change from IGBT to Full SiC modules in an on-board railway power supply.
2015
Event: EPE'15 ECCE Europe 17th European Conference on Power Electronics and Applications
, 08.-10.09.2015
, Genf, Schweiz.
(Conference item: Conference
,
Poster
)
Abstract in another language
In this paper the difference in switching characteristic and switching losses together with the effects of parasitic elements between silicon and silicon-carbide devices on the loss distribution are reviewed. A comparison between a standard silicon IGBT module and a Full SiC MOSFET module is being made on the basis of equal voltage overshoot and maximum switching speed of both devices. Potentials and limitations between the both devices are discussed for the use of Full SiC power module in on-board power supplies for railway application.
Further data
Item Type: | Conference item (Poster) |
---|---|
Refereed: | Yes |
Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Emerging Fields > Energy Research and Energy Technology Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Emerging Fields |
Result of work at the UBT: | Yes |
DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
Date Deposited: | 02 Nov 2015 08:08 |
Last Modified: | 27 Jun 2024 12:50 |
URI: | https://eref.uni-bayreuth.de/id/eprint/21207 |