at Google ScholarTitle data
März, Andreas ; Bertelshofer, Teresa ; Helsper, Martin ; Bakran, Mark-M.:
Comparison of SiC MOSFET gate-drive concepts to suppress parasitic turn-on in low inductance power modules.
2017
Event: EPE 2017 ECCE Europe : 19th European Conference on Power Electronics and Applications
, 11.09.2017 - 14.09.2017
, Warschau, Polen.
(Conference item: Conference
,
Paper
)
Abstract in another language
In this paper different gate drive concepts to eliminate parasitic turn-on for SiC MOSFETs are discussed. Experimental results show a potential for lowering switching losses of SiC MOSFETs during fast switching operation, reduction of turn-off overvoltage across the bodydiode. Finally increased requirement on the gate drive unit are discussed.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics Faculties Faculties > Faculty of Engineering Science |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 26 Sep 2017 06:11 |
| Last Modified: | 09 Jan 2023 12:44 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/39740 |