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Comparison of SiC MOSFET gate-drive concepts to suppress parasitic turn-on in low inductance power modules

Title data

März, Andreas ; Bertelshofer, Teresa ; Helsper, Martin ; Bakran, Mark-M.:
Comparison of SiC MOSFET gate-drive concepts to suppress parasitic turn-on in low inductance power modules.
2017
Event: EPE 2017 ECCE Europe : 19th European Conference on Power Electronics and Applications , 11.09.2017 - 14.09.2017 , Warschau, Polen.
(Conference item: Conference , Paper )

Abstract in another language

In this paper different gate drive concepts to eliminate parasitic turn-on for SiC MOSFETs are discussed. Experimental results show a potential for lowering switching losses of SiC MOSFETs during fast switching operation, reduction of turn-off overvoltage across the bodydiode. Finally increased requirement on the gate drive unit are discussed.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics
Faculties
Faculties > Faculty of Engineering Science
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 26 Sep 2017 06:11
Last Modified: 09 Jan 2023 12:44
URI: https://eref.uni-bayreuth.de/id/eprint/39740