Title data
Bertelshofer, Teresa ; März, Andreas ; Bakran, Mark-M.:
Design Rules to Adapt the Desaturation Detection for SiC MOSFET Modules.
2017
Event: PCIM Europe 2017
, 16.-18.05.2017
, Nürnberg, Deutschland.
(Conference item: Conference
,
Paper
)
Abstract in another language
This paper presents on overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules adapting the existing desaturation detection (Uce,desat method) which is state-of-the-art for IGBTs. These adjustmentes include sparate detection paths for hard switching faults (HSF), faults under load (FUL) and overcurrents (OC). It includes preventive gate clamping and soft shut down as well. Test results show a reliable detection and shut down of overcurrents, HSF and FUL shilw not influencing the normal switching behaciour of the device.
Further data
Item Type: | Conference item (Paper) |
---|---|
Refereed: | Yes |
Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics Faculties Faculties > Faculty of Engineering Science |
Result of work at the UBT: | Yes |
DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
Date Deposited: | 26 Sep 2017 06:13 |
Last Modified: | 09 Jan 2023 12:44 |
URI: | https://eref.uni-bayreuth.de/id/eprint/39742 |