at Google ScholarTitle data
Hain, Stefan ; Bakran, Mark-M.:
Suitable Turn-Off Strategies for IGBTs with High Desaturation Current During Short Circuit Failures Detected with the 2D-Short Circuit Detection Method.
2017
Event: PCIM Europe 2017
, 16.-18.05.2017
, Nürnberg, Deutschland.
(Conference item: Conference
,
Paper
)
Abstract in another language
The 2D-short circuit detection method is one of the fastest fault detection methods for power semicon-ductors. It is able to detect a short circuit failure even before the collector current reaches its desaturaion limit. But a fast fault detection is just one part of a reliable short circuit protection. It has to be combined with a fast reacting and sutiable turn-off strategy in order to provide a working short circuit protection. Therefore, this paper presents the suitability of different turn-off strategies for short circuit events for IGBTs with a high desturation current, detected with the 2D-short circuit detection method.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics Faculties Faculties > Faculty of Engineering Science |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 26 Sep 2017 06:15 |
| Last Modified: | 09 Jan 2023 12:20 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/39745 |