at Google ScholarTitle data
Bertelshofer, Teresa ; März, Andreas ; Bakran, Mark-M.:
A Temperature Compensated Overcurrent and Short-Circuit Detection Method for SiC MOSFET Modules.
2017
Event: EPE 2017 ECCE Europe : 19th European Conference on Power Electronics and Applications
, 11.09.2017 - 14.09.2017
, Warschau, Polen.
(Conference item: Conference
,
Paper
)
Abstract in another language
This paper presents an overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules. It adapts the existing desaturation detection (=Uce,desat method) known from IGBTs. These adjustments inculde separate detection paths for hard switching faults (HSF) and fault under load (FUL) as well as overcurrent. The necessity of a junction temperature compensation for detecting each type of fault (HSF, FUL or overcurrent = OC) is discussed.
Further data
| Item Type: | Conference item (Paper) |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Chair Mechatronics Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Faculties Faculties > Faculty of Engineering Science |
| Result of work at the UBT: | Yes |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 16 Jan 2018 08:16 |
| Last Modified: | 09 Jan 2023 12:45 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/41733 |