at Google ScholarTitle data
Mulaosmanovic, H. ; Slesazeck, S. ; Ocker, J. ; Pesic, M. ; Muller, S. ; Flachowsky, S. ; Müller, J. ; Polakowski, P. ; Paul, J. ; Jansen, S. ; Kolodinski, S. ; Richter, C. ; Piontek, S. ; Schenk, T. ; Kersch, A. ; Künneth, Christopher ; van Bentum, R. ; Schroder, U. ; Mikolajick, T.:
Evidence of single domain switching in hafnium oxide based FeFETs : Enabler for multi-level FeFET memory cells.
In:
2015 IEEE International Electron Devices Meeting (IEDM). -
Washington, DC
,
2015
. - S. 26.8.1-3
ISBN 978-1-4673-9894-7
DOI: https://doi.org/10.1109/IEDM.2015.7409777
Abstract in another language
Recent discovery of ferroelectricity in HfO2 thin films paved the way for demonstration of ultra-scaled 28 nm Ferroelectric FETs (FeFET) as non-volatile memory (NVM) cells [1]. However, such small devices are inevitably sensible to the granularity of the polycrystalline gate oxide film. Here we report for the first time the evidence of single ferroelectric (FE) domain switching in such scaled devices. These properties are sensed in terms of abrupt threshold voltage (VT) shifts leading to stable intermediate VT levels. We emphasize that this feature enables multi-level cell (MLC) FeFETs and gives a new perspective on steep subthreshold devices based on ferroelectric HfO2.
Further data
| Item Type: | Article in a book |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Juniorprofessur Computational Materials Science > Juniorprofessur Computational Materials Science - Juniorprof. Dr. Christopher Künneth |
| Result of work at the UBT: | No |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 05 May 2023 08:59 |
| Last Modified: | 05 May 2023 08:59 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/76144 |