at Google ScholarTitle data
Schroeder, U. ; Pešic, M. ; Schenk, T. ; Mulaosmanovic, H. ; Slesazeck, S. ; Ocker, J. ; Richter, C. ; Yurchuk, E. ; Khullar, K. ; Müller, J. ; Polakowski, P. ; Grimley, E. D. ; LeBeau, J. M. ; Flachowsky, S. ; Jansen, S. ; Kolodinski, S. ; van Bentum, R. ; Kersch, A. ; Künneth, Christopher ; Mikolajick, T.:
Impact of field cycling on HfO₂ based non-volatile memory devices.
In:
2016 46th European Solid-State Device Research Conference (ESSDERC). -
Lausanne
,
2016
. - pp. 364-368
ISBN 978-1-5090-2969-3
DOI: https://doi.org/10.1109/ESSDERC.2016.7599662
Abstract in another language
The discovery of ferroelectricity in HfO 2 and ZrO 2 based dielectrics enabled the introduction of these materials in highly scalable non-volatile memory devices. Typical memory cells are using a capacitor or a transistor as the storage device. These scaled devices are sensitive to the local structure of the storage material, here the granularity of the dielectric doped HfO 2 layer, varying the local ferroelectric properties. Detailed studies are conducted to correlate these structural properties to the electrical performance to further optimize the devices for future applications.
Further data
| Item Type: | Article in a book |
|---|---|
| Refereed: | Yes |
| Institutions of the University: | Faculties > Faculty of Engineering Science > Juniorprofessur Computational Materials Science > Juniorprofessur Computational Materials Science - Juniorprof. Dr. Christopher Künneth |
| Result of work at the UBT: | No |
| DDC Subjects: | 600 Technology, medicine, applied sciences > 620 Engineering |
| Date Deposited: | 05 May 2023 08:51 |
| Last Modified: | 05 May 2023 08:51 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/76158 |