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Walter, Michael ; Bakran, Mark-M.:
Optimized Short-Circuit Turn-Off Performance in IGBTs with High Desaturation Current.
2026
Veranstaltung: The 2026 International Power Electronics Conference (IPEC-Nagasaki 2026 -ECCE Asia-)
, 31.05.-04.06.2026
, Nagasaki, Japan.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Paper
)
Abstract
IGBTs with high desaturation current offer very low conduction losses but present challenges for short-circuit protection due to delayed desaturation. This paper investigates turn-off strategies to ensure safe operation under high-current shortcircuit conditions. Controlled gate discharge is implemented using resistive, constant-current, and current-boost methods. The current-boost approach introduces a temporary gate discharge current overshoot at turn-off, accelerating gate voltage reduction and IGBT current decay. By optimizing the boost capacitance and feedback resistor, the turn-off behavior is tailored to achieve a nearly ideal flat-top voltage waveform. Experimental results under Type-1 short-circuit conditions demonstrate that the optimized current-boost method reduces peak current up to 40% and turn-off energy by up to 60% compared to conventional approaches.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Paper) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Keywords: | current-boost; IGBT; short-circuit; turn-off strategy |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 21 Okt 2026 06:54 |
| Letzte Änderung: | 21 Okt 2026 06:56 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/100012 |