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Bäumler, Andreas ; Bakran, Mark-M.:
Analysis of the Temperature- and Voltage-Dependencies of Gate Impedance in Different GaN Devices.
2026
Veranstaltung: PCIM Europe 2026
, 09.06.-11.06.2026
, Nürnberg.
(Veranstaltungsbeitrag: Kongress/Konferenz/Symposium/Tagung
,
Paper
)
Abstract
The relevance of GaN semiconductors in power electronics is steadily increasing. It is therefore important to know the properties of the various components under different operating conditions. This paper deals with the temperature dependence of the gate impedance and the input capacitances in different GaN semiconductors such as Schottky-gate e-mode GaNs, Gate Injection Transistors and GaN cascodes. In addition to the temperature dependence, other cross-correlations such as the influence of the gate-source and drain-source voltage on these properties are investigated. Most of the GaN-devices analyzed exhibit a linear temperature dependency of the internal gate resistance and a significant gate-source voltage dependence of its input capacitance.
Weitere Angaben
| Publikationsform: | Veranstaltungsbeitrag (Paper) |
|---|---|
| Begutachteter Beitrag: | Ja |
| Institutionen der Universität: | Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profilfelder > Advanced Fields > Neue Materialien Profilfelder > Emerging Fields > Energieforschung und Energietechnologie Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET |
| Titel an der UBT entstanden: | Ja |
| Themengebiete aus DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften |
| Eingestellt am: | 21 Okt 2026 07:02 |
| Letzte Änderung: | 21 Okt 2026 07:02 |
| URI: | https://eref.uni-bayreuth.de/id/eprint/100013 |