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Current Measurement and Gate-Resistance Mismatch in Paralleled Phases of High Power SiC MOSFET Modules

Title data

Horff, Roman ; Bertelshofer, Teresa ; März, Andreas ; Bakran, Mark-M.:
Current Measurement and Gate-Resistance Mismatch in Paralleled Phases of High Power SiC MOSFET Modules.
2016
Event: PCIM Europe 2016 , 10.-12.05.2016 , Nürnberg.
(Conference item: Conference , Poster )

Abstract in another language

This paper deals with the problems of current measurement in paralleled phases. A solution based on low inductive shunts is proposed. The influence of gate-resistance mismatch on the switching behaviour and the resulting switching losses are analysed for high power SiC MOSFET modules.

Further data

Item Type: Conference item (Poster)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 19 May 2016 11:20
Last Modified: 19 May 2016 11:20
URI: https://eref.uni-bayreuth.de/id/eprint/32407