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The role of the biexciton in a dynamic density matrix theory of the semiconductor band edge

Title data

Axt, Vollrath M. ; Stahl, Arne:
The role of the biexciton in a dynamic density matrix theory of the semiconductor band edge.
In: Zeitschrift für Physik B Condensed Matter. Vol. 93 (1994) Issue 2 . - pp. 205-211.
ISSN 1431-584X
DOI: https://doi.org/10.1007/BF01316964

Abstract in another language

We describe the dielectric response of the semiconductor band edge in a dynamic density matrix model. Our treatment is based on a set of χ₃-relevant constitutive equations involving two-, four- and six-point density matrices. We demonstrate that under certain conditions all contributions to the third order susceptibility can be expressed in terms of excitonic and biexcitonic transitions. As a first application of these χ₃-relevant equations we investigate the influence of the biexciton on the optical Stark effect in CuCl. We calculate shifts and lineshapes. Our results turn out to be in excellent agreement with experiments as well as with other theoretical predictions.

Further data

Item Type: Article in a journal
Refereed: Yes
Keywords: Excitons; Biexcitons; density matrix dynamics; semiconductors; non-linear optics; ultrafast dynamics
Institutions of the University: Faculties > Faculty of Mathematics, Physics und Computer Science > Department of Physics
Faculties > Faculty of Mathematics, Physics und Computer Science > Department of Physics > Chair Theoretical Physics III > Chair Theoretical Physics III - Univ.-Prof. Dr. Martin Axt
Faculties
Faculties > Faculty of Mathematics, Physics und Computer Science
Faculties > Faculty of Mathematics, Physics und Computer Science > Department of Physics > Chair Theoretical Physics III
Result of work at the UBT: No
DDC Subjects: 500 Science > 530 Physics
Date Deposited: 16 Oct 2017 07:38
Last Modified: 16 Oct 2017 07:38
URI: https://eref.uni-bayreuth.de/id/eprint/40006