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Intraband Dynamics at the Semiconductor Band Edge : Shortcomings of the Bloch Equation Method

Title data

Axt, Vollrath M. ; Bartels, G. ; Stahl, Arne:
Intraband Dynamics at the Semiconductor Band Edge : Shortcomings of the Bloch Equation Method.
In: Physical Review Letters. Vol. 76 (1996) Issue 14 . - pp. 2543-2546.
ISSN 1079-7114
DOI: https://doi.org/10.1103/PhysRevLett.76.2543

Abstract in another language

The validity of the semiconductor Bloch equations (SBE) depends on the approximate decomposition of an intraband correlation function into a product of interband transition densities. We analyze the consequences of this approximation on the intraband dynamics of an optically excited semiconductor. As a special example where the SBE treatment becomes questionable we consider the THz emission of a narrow band superlattice in a static bias field. A comparison of the second order SBE solution with a rigorous second order treatment of this system helps one identify the weak points of the SBE approach and understand the physical background of its failure.

Further data

Item Type: Article in a journal
Refereed: Yes
Keywords: dynamics controlled truncation; semiconductor superlattices; intra-band dynamics;
non-linear optics; ultrafast dynamics; excitons; terahertz emission
Institutions of the University: Faculties > Faculty of Mathematics, Physics und Computer Science > Department of Physics
Faculties > Faculty of Mathematics, Physics und Computer Science > Department of Physics > Chair Theoretical Physics III > Chair Theoretical Physics III - Univ.-Prof. Dr. Martin Axt
Faculties
Faculties > Faculty of Mathematics, Physics und Computer Science
Faculties > Faculty of Mathematics, Physics und Computer Science > Department of Physics > Chair Theoretical Physics III
Result of work at the UBT: No
DDC Subjects: 500 Science > 530 Physics
Date Deposited: 16 Oct 2017 10:14
Last Modified: 16 Oct 2017 10:14
URI: https://eref.uni-bayreuth.de/id/eprint/40013