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High dynamic stress on SiC trench MOSFET body diodes and their behaviour

Title data

März, Andreas ; Bertelshofer, Teresa ; Bakran, Mark-M.:
High dynamic stress on SiC trench MOSFET body diodes and their behaviour.
2018
Event: PCIM Europe 2018 , 05.06.-07.06.2018 , Nürnberg.
(Conference item: Conference , Paper )

Abstract in another language

In this paper state-of-the-art SiC trench MOSFET’s
body diodes are investigated under high dynamic
stress during reverse-recovery and in parallel configuration
of a power module. Measurements on
SiC MOSFET body diodes under high dynamic
stress show the effect of a clamping of the drainsource-
voltage together with a generation of additional
charge carriers at turn-off. This paper
analyses the cause of this effect and its dependence
on switching speed and commutation
inductance.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Mechatronics
Profile Fields
Profile Fields > Advanced Fields
Profile Fields > Emerging Fields
Research Institutions
Research Institutions > Research Units
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 14 Nov 2018 08:07
Last Modified: 14 Nov 2018 08:07
URI: https://eref.uni-bayreuth.de/id/eprint/46311