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A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS

Title data

Ciocoveanu, Radu ; Weigel, Robert ; Hagelauer, Amelie ; Issakov, Vadim:
A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS.
In: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium : Proceedings. - San Diego, USA , 2018
ISBN 978-1-5386-6502-2
DOI: https://doi.org/10.1109/BCICTS.2018.8550908

Abstract in another language

This paper presents a wideband digitally tunable SPST switch based on the travelling-wave concept that has been realized in a 22 nm FD-SOI CMOS technology. The digital control for return loss is performed through mutual inductance switching. Small-signal measurement results show that the proposed SPST switch achieves a bandwidth of 10-110 GHz, with an insertion loss of 1.2 dB at 60 GHz and a 24 dB isolation at 60 GHz, whereas large-signal measurements show a 1-dB compression point of +7 dBm at 24 GHz. Furthermore, the 3 digital control bits allow tuning return loss center frequency by approximately 7 GHz. The chip core size is 0.12 mm x 0.15 mm

Further data

Item Type: Article in a book
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 18 Oct 2019 06:58
Last Modified: 18 Oct 2019 06:58
URI: https://eref.uni-bayreuth.de/id/eprint/52543