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5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS

Title data

Ciocoveanu, Radu ; Weigel, Robert ; Hagelauer, Amelie ; Geiselbrechtinger, Angelika ; Issakov, Vadim:
5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS.
In: Asia-Pacific Microwave Conference : Proceedings. - Kyoto, Japan , 2018 . - pp. 147-149
ISBN 978-4-9023-3945-1
DOI: https://doi.org/10.23919/APMC.2018.8617378

Abstract in another language

This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth generation (5G) K/Ka band front-ends that has been realized in a 45nm PDSOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (Psat) of 17.3 dBm with a 39.7 maximum power-added efficiency (PAEmax) at 24 GHz. The output-referred 1-dB compression point (OP1dB) is 14.3dBm and the saturated output power varies from 15.9dBm to 17.3dBm for a frequency range from 22 GHz to 28 GHz. Furthermore, the circuit draws 40mA from a 2.9V supply and the chip core size is 0.35mm x 0.25 mm.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: Stacked PA; 45nm PD-SOI; 5G; High Power; High Efficiency
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 18 Oct 2019 07:04
Last Modified: 18 Oct 2019 07:04
URI: https://eref.uni-bayreuth.de/id/eprint/52546