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A 20.7 PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS

Title data

Ciocoveanu, Radu ; Weigel, Robert ; Hagelauer, Amelie ; Issakov, Vadim:
A 20.7 PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS.
Paris , 2019

Abstract in another language

This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for short range radar applications, realized in a 28nm bulk CMOS technology. Measurement results show a saturated output power (Psat) of 11.9dBm with a 20.7 power-added efficiency (PAE) at 60 GHz. Moreover, the measurements show that for a frequency range from 57 GHz to 64 GHz, the Psat varies from 10.5dBm to 11.2dBm and the circuit draws 26mA from a 0.9V power supply. Furthermore, the fabricated chip has an area of 0.61mm x 0.31mm including the pads.

Further data

Item Type: Preprint, postprint
Keywords: Differential PA; 60 GHz; 28nm CMOS; High Efficiency
Institutions of the University: Faculties > Faculty of Engineering Science > >
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 16 Oct 2019 09:54
Last Modified: 16 Oct 2019 09:54
URI: https://eref.uni-bayreuth.de/id/eprint/52690