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Optimal Hard Switching as Benchmark for SiC MOSFET Switching Losses with limited du/dt and blocking voltage

Title data

Maier, Robert ; Bakran, Mark-M.:
Optimal Hard Switching as Benchmark for SiC MOSFET Switching Losses with limited du/dt and blocking voltage.
2019
Event: 21th European Conference on Power Electronics and Applications , 02.09.-06.09.2019 , Genua.
(Conference item: Conference , Paper )

Abstract in another language

In this paper, a universally applicable analytic benchmark is introduced to calculate optimal achievable hard switching losses. In a system, where the semiconductor has to meet given limitations like a maximum voltage slope, the benchmark calculates minimum reachable switching losses when the limits are completely exploited. In principle, two values, the maximum voltage slope du/dt and the commutation loop stray inductance Ls suffice to calculate an optimal hard switching waveform concerning switching losses. The benchmark is developed for high power applications, where the switching speed of the semiconductor is limited by the du/dt and the inductive switching overvoltage. The benchmark can be used for a fast evaluation of the effectiveness of certain optimization methods of the gate control or the effort of system parameter optimizations like reducing the stray inductance. In contrast to simulation tools it is independent of the MOSFET characteristic and gate driver, which allows an independent basic analysis.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 08 Oct 2019 06:29
Last Modified: 08 Oct 2019 06:29
URI: https://eref.uni-bayreuth.de/id/eprint/52705