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Applying a 3300V SiC Half-bridge to an MMC Based HVDC System

Title data

Hohmann, Fabian ; Bakran, Mark-M.:
Applying a 3300V SiC Half-bridge to an MMC Based HVDC System.
Event: 21th European Conference on Power Electronics and Applications, Genua , 02.09.-06.09.2019 , Genua.
(Conference item: Conference , Paper )

Abstract in another language

A 3.3 kV silicon carbide (SiC) MOSFET is analyzed for the use in a modular multilevel converter (MMC). A laboratory-setup of a submodule is built to characterize the switching behavior. The total losses are calculated for the MMC operation. A comparison to a silicon (Si) based IGBT model is made based on losses and the necessary semiconductor area.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 17 Oct 2019 09:00
Last Modified: 17 Oct 2019 09:00
URI: https://eref.uni-bayreuth.de/id/eprint/52778