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Predicting Failure of SiC MOSFETs under Short Circuit and Surge Current Conditions with a single Thermal Model

Title data

Hofstetter, Patrick ; Bakran, Mark-M.:
Predicting Failure of SiC MOSFETs under Short Circuit and Surge Current Conditions with a single Thermal Model.
2018
Event: 20th European Conference on Power Electronics and Applications , 17-21 September 2018 , Riga, Lettland.
(Conference item: Conference , Paper )

Abstract in another language

In this paper a thermal model will be presented which can be used to predict the failure of SiC MOSFETs under different error conditions. It is capable of simulating a large time range to cover short circuit failures of a few microseconds and surge currents of multiple milliseconds.

Further data

Item Type: Conference item (Paper)
Refereed: Yes
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profile Fields > Advanced Fields > Advanced Materials
Profile Fields > Emerging Fields > Energy Research and Energy Technology
Research Institutions > Research Units > ZET - Zentrum für Energietechnik
Result of work at the UBT: Yes
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 11 Feb 2020 07:54
Last Modified: 11 Feb 2020 07:54
URI: https://eref.uni-bayreuth.de/id/eprint/54319