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Antenna Aperture Tuning with High-Voltage Bulk-CMOS Switch-Based RF Capacitor

Title data

Solomko, Valentin ; Oezdamar, Oguzhan ; Wang, Kun ; Pfuhl, Nadine ; Thomas, Anthony ; Weigel, Robert ; Hagelauer, Amélie:
Antenna Aperture Tuning with High-Voltage Bulk-CMOS Switch-Based RF Capacitor.
In: IEEE (ed.): Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC). - Piscataway, NJ : IEEE , 2019 . - pp. 1464-1466
ISBN 978-1-72813-518-2
DOI: https://doi.org/10.1109/APMC46564.2019.9038800

Official URL: Volltext

Abstract in another language

A circuit for tuning the aperture of inverted-F antenna (IFA) utilizing a high-voltage RF-switch-based digitally-tunable capacitor in bulk-CMOS technology is demonstrated. The tuning network consists of the 5-bit switchable capacitor and a parallel inductor which are placed at the high-voltage plane of the radiating element with peak RF voltages of 60 V applied across the circuit. The antenna covers low and middle cellular frequency bands with fine tuning steps, providing return loss at the feed point of above 6 dB for more than 90% of the target frequency range. The measured peak reflected second and third harmonics generated by the tuned antenna when driven by the 34 dBm low-band RF signal are -38 dBm and -56 dBm respectively.

Further data

Item Type: Article in a book
Refereed: Yes
Keywords: Capacitors; Switches; Radio frequency; Tuning; Antenna; Measurement; Feeds; Apertures
Institutions of the University: Faculties > Faculty of Engineering Science > Chair Communication Electronics > Chair Communication Electronics - Univ.-Prof. Dr.-Ing. Amélie Marietta Hagelauer
Faculties
Faculties > Faculty of Engineering Science
Faculties > Faculty of Engineering Science > Chair Communication Electronics
Result of work at the UBT: No
DDC Subjects: 600 Technology, medicine, applied sciences > 620 Engineering
Date Deposited: 19 Nov 2020 08:21
Last Modified: 29 Mar 2021 07:16
URI: https://eref.uni-bayreuth.de/id/eprint/57360